纳米医学与纳米技术杂志

抽象的

Study on the Effect of Plasma Treatment on Flat-band-voltage and Equivalent Oxide Thickness using Metal-organic Chemical Vapor Deposition TiN Film as p-MOSFETS Metal Gate Electrode

Jianfeng Gao, Hong Yang, Guobin Bai, Junfeng Li and Chao Zhao

This work aimed to study on the effects of plasma treatment on flat band voltage (Vfb) and equivalent oxide thickness (EOT) using Metal-organic Chemical Vapor Deposition (MOCVD) TiN film as p-MOSFETs metal gate electrode. Theplasma treatment conditions effect on the resistance and composition properties of MOCVD TiN, consequently, they can modulate work function and control threshold voltage. The effects of “plasma treatment” were imposed to favor the formation of Ti-N bonds, thus decreasing the rate Ti-C bond and favoring a crystallized stoichiometric TiN phase to increase PMOS Vfb shift. Meanwhile, plasma treatments accelerate interfacial oxide formation and increase EOT. On the other hand, EOT increases with the increase of plasma treatment time and power in this work, but Vfb does not always increase and reach a max value.